Advanced Ceria CMP Slurry For Silicon Wafer Polishing And Semiconductor Surface Planarization
Product Details
| Purity: | ≥ 99.95% | Solid Content: | 5-30 Wt% |
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| Particle Size (D50): | 80 Nm | PH Range: | Customizable |
| Defect Density: | Ultra-Low | Dispersion Stability: | Excellent |
| Highlight |
Ceria CMP slurry for silicon wafers,Semiconductor planarization polishing slurry,Rare earth CMP slurry with warranty |
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Product Description
Advanced Ceria CMP Slurry For Silicon Wafer Polishing And Semiconductor Surface Planarization
Product Overview
This advanced ceria-based CMP slurry is optimized for high-precision silicon wafer polishing where nanoscale surface control is required. The chemically active cerium oxide particles promote efficient material removal while preserving crystal integrity and minimizing subsurface damage.
The slurry enables improved wafer flatness, reduced dishing and erosion effects, and enhanced process stability across large wafer diameters.
Key Technical Advantages
- High wafer flatness control
- Low dishing and erosion
- Nanometer-level surface roughness
- Excellent within-wafer uniformity
- Low particle agglomeration
- Easy post-CMP cleaning
- Suitable for high-volume manufacturing
Particle Size Distribution
Applications
- Silicon wafer final polishing
- Logic and memory wafer CMP
- Advanced packaging substrates
- 300 mm wafer manufacturing
- Surface defect reduction processes
Product Highlights
Advanced Ceria CMP Slurry For Silicon Wafer Polishing And Semiconductor Surface Planarization Product Overview This advanced ceria-based CMP slurry is optimized for high-precision silicon wafer polishing where nanoscale surface control is required. The chemically active cerium oxide particles ...
High QualitySolid Rare Cerium Acetate Hydrate Powder For Catalyst
Cerium Acetate Molecular Formula: Ce(AC)₃·xH₂O Appearance: Cerium acetate is a white snowflake-like solid Application: Used as a raw material for other cerium salts and cerium oxide, as well as petroleum additives, etc. Item Specification Testing Standard Item Ce(AC) 3 -3N5 Ce(AC) 3 -4N Ce(AC) 3 -4N5 Ce(AC) 3 -5N TREO(wt%) ≥45 ≥45 ≥45 ≥45 Rare Earth Relative Purity (wt%) La 2 O 3 /TREO ≤0.01 ≤0.005 ≤0.003 ≤0.0004 GB/T 18115.2 CeO 2 /TREO ≥99.95 ≥99.99 ≥99.995 ≥99.999 Pr 6 O
Competitive Price Lanthanum Cerium Carbonate in big size
Large particle size Lanthanum Cerium Carbonate Molecular Formula: (LaCe)₂(CO₃)₃ Appearance: Coarse particle lanthanum cerium carbonate is a white powder Application: Used for the production of rare earth polishing powder. Item Specification Testing Standard Item (LaCe) 2 (CO 3 ) 3 -65CeB1 (LaCe) 2 (CO 3 ) 3 -65CeB2 TREO(wt%) ≥45.0 ≥45.0 Lanthanum-Cerium Distribution and Rare Earth Impurities (wt%) La 2 O 3 /TREO 35±2 35±2 GB/T 18115.1 CeO 2 /TREO 65±2 65±2 Pr 6 O 11 /TREO ≤0
Ultra-Low Defect Cerium Oxide CMP Slurry For Semiconductor Silicon Wafer Manufacturing
Ultra-Low Defect Cerium Oxide CMP Slurry For Semiconductor Silicon Wafer Manufacturing Product Overview Our ultra-low defect cerium oxide CMP slurry is designed to meet the stringent requirements of next-generation semiconductor fabrication. The slurry delivers precise chemical-mechanical interaction between abrasive particles and silicon surfaces, enabling atomic-scale planarization required for advanced nodes and high-performance devices. Engineered for compatibility with
Advanced Ceria CMP Slurry For Silicon Wafer Polishing And Semiconductor Surface Planarization
Advanced Ceria CMP Slurry For Silicon Wafer Polishing And Semiconductor Surface Planarization Product Overview This advanced ceria-based CMP slurry is optimized for high-precision silicon wafer polishing where nanoscale surface control is required. The chemically active cerium oxide particles promote efficient material removal while preserving crystal integrity and minimizing subsurface damage. The slurry enables improved wafer flatness, reduced dishing and erosion effects,
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