Ultra-Low Defect Cerium Oxide CMP Slurry For Semiconductor Silicon Wafer Manufacturing
Product Details
| Purity: | ≥ 99.95% | Solid Content: | 5-30 Wt% |
|---|---|---|---|
| Particle Size (D50): | 30-120 Nm | PH Range: | Adjustable |
| Removal Rate Uniformity: | Excellent | Shelf Life: | 6–12 Months |
| Highlight |
Ultra-low defect cerium oxide CMP slurry,Cerium oxide slurry for semiconductor wafers,Rare earth polishing slurry for silicon |
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Product Description
Ultra-Low Defect Cerium Oxide CMP Slurry For Semiconductor Silicon Wafer Manufacturing
Product Overview
Our ultra-low defect cerium oxide CMP slurry is designed to meet the stringent requirements of next-generation semiconductor fabrication. The slurry delivers precise chemical-mechanical interaction between abrasive particles and silicon surfaces, enabling atomic-scale planarization required for advanced nodes and high-performance devices.
Engineered for compatibility with leading CMP platforms, the slurry supports stable processing across extended polishing cycles while maintaining consistent removal rates and excellent wafer yield performance.
Key Technical Advantages
- Atomic-level surface finishing capability
- Excellent defect control for advanced nodes
- High process stability
- Reduced scratch and haze formation
- Optimized chemical reactivity
- Semiconductor-grade purity control
- Reliable large-scale manufacturing performance
Particle Size Distribution
Applications
- Advanced node semiconductor fabrication
- STI and ILD planarization support
- Silicon substrate finishing
- CMP process development
- Foundry and IDM manufacturing lines
Product Highlights
Ultra-Low Defect Cerium Oxide CMP Slurry For Semiconductor Silicon Wafer Manufacturing Product Overview Our ultra-low defect cerium oxide CMP slurry is designed to meet the stringent requirements of next-generation semiconductor fabrication. The slurry delivers precise chemical-mechanical interactio...
High QualitySolid Rare Cerium Acetate Hydrate Powder For Catalyst
Cerium Acetate Molecular Formula: Ce(AC)₃·xH₂O Appearance: Cerium acetate is a white snowflake-like solid Application: Used as a raw material for other cerium salts and cerium oxide, as well as petroleum additives, etc. Item Specification Testing Standard Item Ce(AC) 3 -3N5 Ce(AC) 3 -4N Ce(AC) 3 -4N5 Ce(AC) 3 -5N TREO(wt%) ≥45 ≥45 ≥45 ≥45 Rare Earth Relative Purity (wt%) La 2 O 3 /TREO ≤0.01 ≤0.005 ≤0.003 ≤0.0004 GB/T 18115.2 CeO 2 /TREO ≥99.95 ≥99.99 ≥99.995 ≥99.999 Pr 6 O
Competitive Price Lanthanum Cerium Carbonate in big size
Large particle size Lanthanum Cerium Carbonate Molecular Formula: (LaCe)₂(CO₃)₃ Appearance: Coarse particle lanthanum cerium carbonate is a white powder Application: Used for the production of rare earth polishing powder. Item Specification Testing Standard Item (LaCe) 2 (CO 3 ) 3 -65CeB1 (LaCe) 2 (CO 3 ) 3 -65CeB2 TREO(wt%) ≥45.0 ≥45.0 Lanthanum-Cerium Distribution and Rare Earth Impurities (wt%) La 2 O 3 /TREO 35±2 35±2 GB/T 18115.1 CeO 2 /TREO 65±2 65±2 Pr 6 O 11 /TREO ≤0
Ultra-Low Defect Cerium Oxide CMP Slurry For Semiconductor Silicon Wafer Manufacturing
Ultra-Low Defect Cerium Oxide CMP Slurry For Semiconductor Silicon Wafer Manufacturing Product Overview Our ultra-low defect cerium oxide CMP slurry is designed to meet the stringent requirements of next-generation semiconductor fabrication. The slurry delivers precise chemical-mechanical interaction between abrasive particles and silicon surfaces, enabling atomic-scale planarization required for advanced nodes and high-performance devices. Engineered for compatibility with
Advanced Ceria CMP Slurry For Silicon Wafer Polishing And Semiconductor Surface Planarization
Advanced Ceria CMP Slurry For Silicon Wafer Polishing And Semiconductor Surface Planarization Product Overview This advanced ceria-based CMP slurry is optimized for high-precision silicon wafer polishing where nanoscale surface control is required. The chemically active cerium oxide particles promote efficient material removal while preserving crystal integrity and minimizing subsurface damage. The slurry enables improved wafer flatness, reduced dishing and erosion effects,
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