Ultra-Low Defect Cerium Oxide CMP Slurry For Semiconductor Silicon Wafer Manufacturing
Product Details
| Purity: | ≥ 99.95% | Solid Content: | 5-30 Wt% |
|---|---|---|---|
| Particle Size (D50): | 30-120 Nm | PH Range: | Adjustable |
| Removal Rate Uniformity: | Excellent | Shelf Life: | 6–12 Months |
| Highlight |
Ultra-low defect cerium oxide CMP slurry,Cerium oxide slurry for semiconductor wafers,Rare earth polishing slurry for silicon |
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Product Description
Ultra-Low Defect Cerium Oxide CMP Slurry For Semiconductor Silicon Wafer Manufacturing
Product Overview
Our ultra-low defect cerium oxide CMP slurry is designed to meet the stringent requirements of next-generation semiconductor fabrication. The slurry delivers precise chemical-mechanical interaction between abrasive particles and silicon surfaces, enabling atomic-scale planarization required for advanced nodes and high-performance devices.
Engineered for compatibility with leading CMP platforms, the slurry supports stable processing across extended polishing cycles while maintaining consistent removal rates and excellent wafer yield performance.
Key Technical Advantages
- Atomic-level surface finishing capability
- Excellent defect control for advanced nodes
- High process stability
- Reduced scratch and haze formation
- Optimized chemical reactivity
- Semiconductor-grade purity control
- Reliable large-scale manufacturing performance
Particle Size Distribution

Applications
- Advanced node semiconductor fabrication
- STI and ILD planarization support
- Silicon substrate finishing
- CMP process development
- Foundry and IDM manufacturing lines
Product Highlights
Ultra-Low Defect Cerium Oxide CMP Slurry For Semiconductor Silicon Wafer Manufacturing Product Overview Our ultra-low defect cerium oxide CMP slurry is designed to meet the stringent requirements of next-generation semiconductor fabrication. The slurry delivers precise chemical-mechanical interactio...
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